Showing 37–48 of 164 results
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- High Purity: Ensures defect-free deposition for precision applications.
- Good Electrical Conductivity: Suitable for functional and conductive coatings.
- Stable Performance: Maintains chemical and thermal stability during sputtering processes.
- Customizable: Available in various dimensions and shapes for compatibility with sputtering systems.
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- High Infrared Transparency: Er₂O₃ has excellent transparency in the infrared range, making it a critical material for fiber-optic communications, laser systems, and IR detectors.
- Optical Amplification: The presence of erbium ions in Er₂O₃ allows for efficient optical amplification in the telecommunications band around 1.55 µm, making it ideal for use in EDFAs.
- Thermal Stability: Er₂O₃ sputtering targets provide thin films that are thermally stable and chemically inert, suitable for high-temperature applications.
- Customizability: Er₂O₃ sputtering targets can be customized to meet specific deposition needs, including different geometries, sizes, and purity levels for improved thin-film performance.
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- Strong Luminescence: Eu₂O₃ is widely recognized for its luminescent properties, particularly its emission in the red spectrum, making it ideal for use in display technologies and lighting.
- Stable Thin Films: Europium oxide thin films provide excellent chemical stability and durability, ensuring long-lasting performance in devices exposed to various environmental conditions.
- Optical Transparency: Eu₂O₃ exhibits good optical transparency in specific wavelengths, enhancing its performance in optical applications, from phosphors to light-emitting devices.
- High Purity: High-purity Eu₂O₃ targets (up to 99.99%) ensure optimal performance in thin-film deposition processes, especially in high-tech applications such as displays and optoelectronics.
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- High Purity: Fe₂O₃ sputtering targets are available in high-purity formulations to ensure optimal thin film quality for precise applications.
- Magnetic Properties: The material exhibits ferrimagnetism, making it suitable for magnetic thin films and spintronic applications.
- Semiconductor Properties: As a semiconductor, Fe₂O₃ is used in photocatalysis and solar cells, where it can absorb sunlight and drive photoelectrochemical reactions.
- Environmental Stability: Fe₂O₃ is chemically stable and exhibits good performance in a range of environmental conditions, enhancing its use in sensors and energy applications.
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- High Purity: Guarantees consistent deposition and minimal contamination in thin films.
- Strong Magnetic Properties: Provides excellent performance in magnetic and spintronic devices.
- High Electrical Conductivity: Enhances the functionality of conductive thin films.
- Customizable Dimensions: Manufactured to meet the requirements of diverse sputtering systems.
- Versatile Material: Suitable for applications ranging from electronics to biomedical engineering.
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- High Transparency: Excellent light transmission in the visible spectrum.
- Superior Conductivity: Low sheet resistance for high-performance electrical applications.
- Thermal Stability: Performs reliably under high temperatures.
- Chemical Resistance: Highly resistant to environmental and chemical degradation.
- Customizable Options: Adaptable to diverse deposition system requirements.
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- Wide Bandgap: GaS possesses a wide bandgap of about 2.5 eV, making it suitable for UV and visible light applications.
- High Purity: GaS targets are available in high-purity forms to ensure the quality and performance of the deposited films.
- Layered Structure: The layered nature of GaS allows for easy mechanical exfoliation, enabling the production of high-quality monolayers and thin films.
- Thermal Stability: GaS exhibits good thermal stability, maintaining its properties during high-temperature processing.
- Good Electrical Conductivity: GaS is a good electrical conductor, making it valuable in electronic applications.
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- High Purity: Available in high-purity levels to ensure the quality of thin films for sensitive electronic and optical applications.
- Magnetic Properties: Gd₂O₃ exhibits strong magnetic behavior, making it suitable for applications in magnetic storage and spintronic devices.
- High-k Dielectric: Its high dielectric constant makes Gd₂O₃ ideal for use in semiconductor devices as a gate dielectric material.
- Thermal Stability: Gd₂O₃ is thermally stable, maintaining its structural integrity and properties during high-temperature processes.
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- Semiconducting properties: GeS is a semiconductor with excellent electrical conductivity, ideal for use in electronic and optoelectronic applications.
- Optical performance: The material exhibits specific optical properties that make it suitable for optoelectronic and sensor devices.
- High purity: GeS sputtering targets are available in high purity for optimal thin film quality.
- Customizable: Can be tailored for various applications, with flexibility in composition, size, and target specifications.
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- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
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- Infrared Transparency: GeSe₂ offers excellent transmission in the infrared spectrum, making it suitable for IR optics and photonic applications.
- Phase-Change Properties: GeSe₂ is a key material in phase-change memory technology, providing the ability to switch between different states under thermal or electrical stimuli.
- Chemical and Thermal Stability: GeSe₂ thin films exhibit strong chemical resistance and can withstand high temperatures, ensuring longevity and performance in harsh conditions.
- High Refractive Index: GeSe₂ has a high refractive index, making it suitable for optical applications requiring materials with specific light-bending capabilities.
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- Transparent Conductivity: GZO has a high optical transparency in the visible range while maintaining excellent electrical conductivity.
- High Carrier Mobility: Gallium doping improves the carrier mobility in the Zinc Oxide structure, leading to enhanced performance in electrical applications.
- Low Resistivity: The addition of Gallium significantly reduces the resistivity of the material, making it suitable for transparent electrodes.
- Durability: GZO sputtering targets provide long-lasting performance in deposition processes, ensuring high-quality thin films with uniform characteristics.
- Versatility: Suitable for both DC and RF sputtering techniques, making them versatile for different deposition equipment.
