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- High Refractive Index: Germanium has a high refractive index (around 4.0 at 10 µm), making it ideal for IR optics and imaging systems.
- Broad Infrared Transparency: Germanium is transparent in the infrared spectrum, making it suitable for IR optical coatings, lenses, and filters.
- Excellent Electron Mobility: Germanium’s electron mobility is higher than silicon, enhancing its application in semiconductor devices.
- High Purity: Germanium used in evaporation is highly purified (typically ≥ 99.99%), ensuring uniform and high-quality thin films.
- Low Melting Point: Germanium has a relatively low melting point (937°C), making it easy to evaporate in standard PVD systems.
- Compatible with Silicon: Germanium is often used in conjunction with silicon in semiconductor and optoelectronic applications.
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- High Refractive Index: Germanium’s high refractive index (around 4.0) makes it ideal for use in infrared optics.
- Infrared Transparency: Germanium is transparent to infrared light in wavelengths ranging from 2 µm to 14 µm, making it ideal for thermal imaging and IR optics.
- Semiconductor Properties: Germanium has a narrow band gap (0.67 eV) and high electron mobility, making it suitable for high-speed electronic devices and optical communication.
- Corrosion Resistance: Germanium is resistant to oxidation and corrosion, which makes it durable in harsh environments.
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- Semiconducting properties: GeS is a semiconductor with excellent electrical conductivity, ideal for use in electronic and optoelectronic applications.
- Optical performance: The material exhibits specific optical properties that make it suitable for optoelectronic and sensor devices.
- High purity: GeS sputtering targets are available in high purity for optimal thin film quality.
- Customizable: Can be tailored for various applications, with flexibility in composition, size, and target specifications.
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- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
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- Excellent IR Transparency: GeSe₂ has good transmission in the infrared spectrum, making it ideal for optical coatings and IR components.
- Semiconducting Properties: It exhibits semiconductor behavior, making it useful for electronics, photonics, and photovoltaic applications.
- Phase Change Behavior: GeSe₂ can undergo reversible phase changes, a property that is useful in memory storage devices.
- Good Film Uniformity: When evaporated, GeSe₂ forms uniform, high-quality thin films, suitable for precise optical coatings and electronic applications.
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- Infrared Transparency: GeSe₂ offers excellent transmission in the infrared spectrum, making it suitable for IR optics and photonic applications.
- Phase-Change Properties: GeSe₂ is a key material in phase-change memory technology, providing the ability to switch between different states under thermal or electrical stimuli.
- Chemical and Thermal Stability: GeSe₂ thin films exhibit strong chemical resistance and can withstand high temperatures, ensuring longevity and performance in harsh conditions.
- High Refractive Index: GeSe₂ has a high refractive index, making it suitable for optical applications requiring materials with specific light-bending capabilities.
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- Phase-Change Behavior: GeTe’s ability to rapidly switch between amorphous and crystalline states makes it a critical material for data storage applications, such as PCM.
- Infrared Transparency: GeTe has good transmission in the IR range, making it ideal for infrared coatings and optics.
- Thermoelectric Efficiency: GeTe is known for its thermoelectric properties, suitable for converting heat into electricity or vice versa.
- High-Purity Films: When evaporated, GeTe produces high-quality, uniform thin films ideal for electronic and optical devices.
