Showing 1–12 of 22 results
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- High purity (≥99.99%).
- Exceptional thermoelectric properties.
- High electrical and thermal conductivity.
- Uniform pellet size for consistent deposition and performance.
- Customizable sizes and packaging for various applications.
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- High Purity: Available with ≥99.9% purity for optimal material properties.
- Outstanding Thermoelectric Performance: High Seebeck coefficient and low thermal conductivity.
- Layered Crystal Structure: Enables superior electrical and thermal characteristics.
- Customizable Particle Sizes: Nano (<100 nm) and micro (1–50 µm) sizes tailored to specific requirements.
- Stable and Durable: Chemically stable and resistant to environmental degradation.
- Environmentally Friendly: Non-toxic and suitable for sustainable applications.
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- Excellent Thermoelectric Performance: BiSbTe is known for its high thermoelectric efficiency, which makes it ideal for thermoelectric cooling and energy conversion applications.
- Wide Temperature Range: BiSbTe thin films perform effectively across a broad range of temperatures, particularly between 200 K and 400 K, making them suitable for various environmental conditions.
- Customizable Compositions: The composition of BiSbTe sputtering targets can be adjusted by varying the ratio of bismuth, antimony, and tellurium to meet specific thermoelectric performance requirements.
- High Purity: BiSbTe sputtering targets are available in high-purity grades to ensure the highest quality thin films for critical applications in energy harvesting and temperature regulation.
- Stable & Durable: Bismuth Antimony Telluride thin films exhibit excellent stability, long-term durability, and resistance to degradation under prolonged thermal cycling.
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- High Purity: Offers high purity to ensure the quality of thin films and optimal device performance.
- Excellent Thermoelectric Properties: Ideal for thermoelectric applications where high efficiency is crucial.
- Uniform Deposition: Provides uniform and stable sputtering, ensuring consistent thin film quality.
- Thermal Stability: Excellent resistance to heat and thermal cycling, making it suitable for high-temperature applications.
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- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
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- Phase-Change Behavior: GeTe’s ability to rapidly switch between amorphous and crystalline states makes it a critical material for data storage applications, such as PCM.
- Infrared Transparency: GeTe has good transmission in the IR range, making it ideal for infrared coatings and optics.
- Thermoelectric Efficiency: GeTe is known for its thermoelectric properties, suitable for converting heat into electricity or vice versa.
- High-Purity Films: When evaporated, GeTe produces high-quality, uniform thin films ideal for electronic and optical devices.
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- Semiconducting Properties: MnTe exhibits semiconductor behavior, making it suitable for a variety of electronic and optoelectronic applications.
- Magnetic Properties: With ferromagnetic behavior, MnTe is essential for applications in spintronics and magnetic sensors.
- Thermoelectric Efficiency: The material has promising thermoelectric properties, offering potential in energy harvesting and cooling applications.
- High Purity: MnTe sputtering targets are available in high-purity grades, ensuring the production of clean, high-performance thin films.
- Chemical Stability: MnTe thin films offer chemical stability in various environments, which is critical for long-lasting and reliable device performance.
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- Phase Tunability: MoTe₂ can transition between semiconducting and metallic phases, offering versatility in different electronic and optoelectronic applications.
- High Photoresponse: MoTe₂ thin films are highly responsive to light, especially in the infrared spectrum, making them ideal for photodetectors and imaging devices.
- 2D Material Properties: As a layered material, MoTe₂ offers exceptional flexibility and mechanical properties, enabling its use in cutting-edge flexible electronics.
- Thermoelectric Efficiency: MoTe₂ is suitable for thermoelectric applications due to its ability to efficiently convert heat into electricity.
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- Narrow Bandgap Semiconductor: PbTe has a bandgap of approximately 0.32 eV, which enables high sensitivity to infrared radiation in the 3-5 µm range.
- High Thermoelectric Efficiency: PbTe has excellent thermoelectric properties, making it suitable for energy conversion in both power generation and refrigeration applications.
- Good Thermal and Electrical Conductivity: PbTe exhibits strong thermal and electrical conductivity, essential for efficient thermoelectric devices and IR detection systems.
- Infrared Absorption: PbTe is highly effective at absorbing infrared light, particularly in the mid-IR region, making it ideal for infrared detectors and optoelectronic devices.
- Thin Film Deposition: PbTe can be deposited as a uniform thin film through evaporation techniques, ensuring high performance in electronic and optoelectronic applications.
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- High Purity: Up to 99.99% for superior film quality.
- Customizable Dimensions: Available in various sizes and shapes to fit specific equipment.
- Excellent Performance: Delivers consistent and uniform thin films.
- Thermoelectric and IR Applications: Suitable for deposition in advanced electronics and sensor systems.
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- High Thermoelectric Efficiency: Exhibits high ZT values, making it ideal for thermoelectric power generation and refrigeration applications.
- Low Thermal Conductivity: Sb₂Te₃ has low thermal conductivity, which enhances its thermoelectric performance.
- Reversible Phase-Change Properties: Capable of transitioning between amorphous and crystalline states, essential for phase-change memory applications.
- Good Adhesion and Smooth Films: Forms high-quality, uniform films with good adhesion on various substrates.
- Topological Insulator Behavior: Exhibits unique surface conductivity while insulating the interior, relevant for next-generation electronics.
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- High Thermoelectric Efficiency: Sb₂Te₃ exhibits excellent thermoelectric performance with a high figure of merit (ZT) near room temperature, making it one of the most effective materials for energy conversion and cooling applications.
- Phase-Change Properties: Its ability to rapidly switch between different phases with thermal cycling makes Sb₂Te₃ ideal for memory devices such as phase-change random-access memory (PCRAM).
- Topological Insulator Properties: Sb₂Te₃ is used in cutting-edge research into topological insulators, with potential applications in quantum computing and advanced electronics.
- Customizable Thin Films: Sputtering targets allow for controlled deposition of Sb₂Te₃ films with tailored thickness, composition, and properties for specific device requirements.
