CoFeB Alloy Target 99.9%-99.9999% High Purity Cobalt Ferrum Boron Alloy Sputtering Targets 3N-6N Customized - Tinsan Materials
CoFeB Alloy Target 99.9%-99.9999% High Purity Cobalt Ferrum Boron Alloy Sputtering Targets 3N-6N Customized - Tinsan Materials
CoFeB Alloy Target 99.9%-99.9999% High Purity Cobalt Ferrum Boron Alloy Sputtering Targets 3N-6N Customized - Tinsan Materials
CoFeB Alloy Target 99.9%-99.9999% High Purity Cobalt Ferrum Boron Alloy Sputtering Targets 3N-6N Customized - Tinsan Materials
CoFeB Alloy Target 99.9%-99.9999% High Purity Cobalt Ferrum Boron Alloy Sputtering Targets 3N-6N Customized - Tinsan Materials

CoFeB (Cobalt Iron Boron) Alloy Target

  • High Magnetic Moment: CoFeB alloy exhibits a high magnetic moment, making it ideal for applications requiring strong magnetic fields, such as data storage and magnetic sensors.
  • Soft Magnetic Properties: The addition of boron to the CoFe alloy improves the soft magnetic properties, reducing coercivity and allowing for efficient magnetization with minimal energy loss.
  • Low Coercivity: CoFeB films have very low coercivity, contributing to higher energy efficiency and better performance in magnetic thin films and devices.
  • Thermal Stability: CoFeB exhibits excellent thermal stability, maintaining its magnetic properties at elevated temperatures, making it suitable for high-performance applications.
  • Tunneling Magnetoresistance (TMR): CoFeB is widely used in magnetic tunneling junctions due to its ability to produce a high tunneling magnetoresistance effect, improving the performance of MRAM and spintronic devices.

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Description

Material Cobalt Ferrum/Iron Boron
Purity 99.9% – 99.9999% / 3N 3N5 4N 4N5 5N 5N5 6N
Shape disc, plate, sheet, rod, customized
Size can be customized (contact us)
Package vacuum bag or customer’s request
Place of Origin China
MOQ 1pcs
Supply Ability 10000pcs per month
Lead Time Qty: 1-100, Time: 3-10 days

Qty: >100, Time: to be negotiated

 

Cobalt-Iron-Boron (CoFeB) sputtering targets are widely used in magnetic thin-film applications due to their high magnetic moment, excellent soft magnetic properties, and low coercivity. CoFeB is a key material in the development of advanced magnetic devices, particularly in the fields of spintronics, magnetic tunneling junctions (MTJs), and data storage technologies.

Key Applications:

  • Spintronics: CoFeB is a preferred material in spintronic devices, including magnetic random access memory (MRAM) and magnetic tunneling junctions (MTJs), where its high spin polarization improves data read/write efficiency and retention.
  • Magnetic Sensors: CoFeB thin films are used in magnetoresistive sensors and Hall-effect sensors, offering high sensitivity and low noise, crucial for precision sensing in automotive, industrial, and consumer electronics.
  • Magnetic Data Storage: CoFeB alloys are critical in hard disk drives (HDDs) and other high-density magnetic storage media, improving performance through enhanced magnetic properties and reduced noise.
  • Magnetic Shielding: Due to its excellent soft magnetic properties and high permeability, CoFeB is employed in the production of magnetic shields to protect sensitive electronic components from magnetic interference.
  • Power Electronics: CoFeB films are also used in transformers and inductors, especially in high-frequency power applications, where their low coercivity and high magnetic moment improve efficiency and reduce losses.

Features of CoFeB Sputtering Targets:

  • High Magnetic Moment: CoFeB alloy exhibits a high magnetic moment, making it ideal for applications requiring strong magnetic fields, such as data storage and magnetic sensors.
  • Soft Magnetic Properties: The addition of boron to the CoFe alloy improves the soft magnetic properties, reducing coercivity and allowing for efficient magnetization with minimal energy loss.
  • Low Coercivity: CoFeB films have very low coercivity, contributing to higher energy efficiency and better performance in magnetic thin films and devices.
  • Thermal Stability: CoFeB exhibits excellent thermal stability, maintaining its magnetic properties at elevated temperatures, making it suitable for high-performance applications.
  • Tunneling Magnetoresistance (TMR): CoFeB is widely used in magnetic tunneling junctions due to its ability to produce a high tunneling magnetoresistance effect, improving the performance of MRAM and spintronic devices.

Customization Options:

  • Dimensions: CoFeB sputtering targets can be fabricated in various sizes and shapes, including discs, plates, and custom geometries, to accommodate specific deposition equipment.
  • Purity Levels: High-purity CoFeB targets (up to 99.99%) are available for sensitive applications like semiconductor devices and spintronics.
  • Composition Adjustments: The ratio of cobalt, iron, and boron can be customized to optimize magnetic properties like saturation magnetization and coercivity, depending on the intended use.

CoFeB sputtering targets from Tinsan Materials deliver high magnetic moment, low coercivity, and excellent soft magnetic properties for spintronics, MRAM, magnetic sensors, and data storage devices. Custom sizes and compositions available for advanced thin-film deposition.

If you have specific requirements, such as dimensions, purity, or application details, please contact us to match your needs.

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