CoSi2 (Cobalt Disilicide) Pellets Granules Evaporation Materials
- High Conductivity: CoSi₂ has excellent electrical conductivity, which is crucial for reducing contact resistance in semiconductor applications.
- Strong Silicon Adhesion: It forms stable and well-adhered layers on silicon substrates, ensuring reliable performance in silicon-based devices.
- Thermal Stability: CoSi₂ exhibits high thermal stability, making it suitable for high-temperature processing and applications.
- Corrosion Resistance: The material shows good resistance to oxidation and other forms of corrosion, increasing the longevity of electronic components.
- Low Resistance: CoSi₂ reduces the contact resistance between metal layers and silicon, improving the overall efficiency of electronic devices.
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Description
Material | CoSi2 |
Purity | 99.9% – 99.99% / 3N 3N5 4N |
Shape | Pellets / Granules / Particles / Pieces |
Size | can be customized (contact us) |
Package | vacuum bag or customer’s request |
Place of Origin | China |
Supply Ability | 1000kg per month |
Lead Time | Qty: 1-100, Time: 3-10 days
Qty: >100, Time: to be negotiated |
Cobalt Disilicide (CoSi₂) is a metallic compound commonly used in semiconductor and microelectronics industries, particularly for contact materials in silicon-based devices. CoSi₂ pellets are used in physical vapor deposition (PVD) techniques like electron-beam evaporation and thermal evaporation to form thin films of cobalt disilicide. These films offer excellent conductivity and strong adhesion to silicon, making CoSi₂ an important material for advanced electronic applications, including integrated circuits (ICs) and microchips.
Key Applications:
- Semiconductor Devices: CoSi₂ is widely used in forming contacts, interconnects, and barriers in silicon-based semiconductor devices, including MOSFETs and CMOS technologies.
- Microelectronics: CoSi₂ thin films are essential for minimizing electrical resistance in microelectronic components.
- Silicide Formation: In IC fabrication, CoSi₂ acts as a stable, conductive layer that forms low-resistance silicide contacts with silicon, improving device performance.
- Thin Film Deposition: CoSi₂ films are employed in various thin-film technologies requiring good adhesion and conductive properties on silicon wafers.
Features:
- High Conductivity: CoSi₂ has excellent electrical conductivity, which is crucial for reducing contact resistance in semiconductor applications.
- Strong Silicon Adhesion: It forms stable and well-adhered layers on silicon substrates, ensuring reliable performance in silicon-based devices.
- Thermal Stability: CoSi₂ exhibits high thermal stability, making it suitable for high-temperature processing and applications.
- Corrosion Resistance: The material shows good resistance to oxidation and other forms of corrosion, increasing the longevity of electronic components.
- Low Resistance: CoSi₂ reduces the contact resistance between metal layers and silicon, improving the overall efficiency of electronic devices.
Specifications:
- Material: Cobalt Disilicide (CoSi₂)
- Purity: ≥ 99.9%
- Shape: Pellets
- Size: Available in custom sizes, typically 1mm to 6mm in diameter
- Melting Point: ~1326°C
- Density: 5.5 g/cm³
- Deposition Methods: Suitable for thermal evaporation, electron-beam evaporation, and other PVD techniques
- Applications: Semiconductor contacts, thin-film electronics, microchips, interconnects
Tinsan Materials offers high-purity CoSi₂ (Cobalt Disilicide) Pellets for evaporation in semiconductor, microelectronics, and thin-film applications. Ideal for forming low-resistance contacts in silicon devices and available in various sizes for PVD processes.
If you have specific requirements, such as dimensions, purity, or application details, please contact us to match your needs.