GaN (Gallium Nitride) Sputtering Targets
- Chemical Formula: GaN
- Molecular Weight: 83.73 g/mol
- Density: 6.15 g/cm³
- Bandgap: ~3.4 eV
- Melting Point: ~2500°C (decomposes)
- Purity Levels: 99.99% (4N), 99.999% (5N)
- Electrical Conductivity: High electron mobility and breakdown voltage
- Thermal Conductivity: Excellent heat dissipation for high-power applications
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Description
| Material | Gallium Nitride (GaN) |
| Purity | 99.99% – 99.999% / 4N 5N |
| Shape | disc, plate, sheet, rod, customized |
| Size | can be customized (contact us) |
| Package | vacuum bag or customer’s request |
| MOQ | 1pcs |
| Lead Time | Qty: 1-100, Time: 3-10 days
Qty: >100, Time: to be negotiated |
Gallium Nitride (GaN) Sputtering Targets are high-purity materials used in thin-film deposition processes, including Physical Vapor Deposition (PVD) techniques such as sputtering and evaporation. GaN is widely recognized for its superior electrical, optical, and thermal properties, making it a key material in high-power electronics, optoelectronics, and semiconductor applications. Our GaN sputtering targets are available in various shapes, sizes, and purity levels to meet the stringent requirements of advanced manufacturing.
Material Properties
- Chemical Formula: GaN
- Molecular Weight: 83.73 g/mol
- Density: 6.15 g/cm³
- Bandgap: ~3.4 eV
- Melting Point: ~2500°C (decomposes)
- Purity Levels: 99.99% (4N), 99.999% (5N)
- Electrical Conductivity: High electron mobility and breakdown voltage
- Thermal Conductivity: Excellent heat dissipation for high-power applications
Applications
Gallium Nitride sputtering targets are essential for the production of high-performance electronic and optoelectronic devices:
- Semiconductor Industry: Used in the fabrication of GaN-based transistors, diodes, and power electronics.
- Optoelectronics: Key material for LEDs, laser diodes, and photodetectors operating in the UV and blue spectral range.
- RF & Microwave Devices: Enables high-frequency, high-power applications in telecommunications and radar systems.
- Thin-Film Deposition: Used in advanced coatings and research applications requiring high thermal and chemical stability.
Product Specifications
- Shapes Available: Circular (disc), rectangular, and custom-designed targets.
- Diameter Range: Up to 300 mm (custom sizes available).
- Thickness: Varies based on application requirements.
- Surface Finish: Fine-polished for uniform film deposition.
- Backing Plate: Available with or without bonding to enhance mechanical stability.
Quality Control & Testing
To ensure the highest quality, our GaN sputtering targets undergo rigorous testing, including:
- Chemical Purity Analysis: Verified using X-ray fluorescence spectroscopy (XRF) and Inductively Coupled Plasma Mass Spectrometry (ICP-MS).
- Structural Analysis: Evaluated for crystallinity and uniformity.
- Surface Quality Inspection: Ensuring low roughness (Ra) for optimal thin-film uniformity.
Packaging & Storage
- Individually vacuum-sealed to prevent contamination and oxidation.
- Packed in anti-static, moisture-proof materials for secure transportation.
- Recommended storage in a cool, dry environment to maintain integrity.
Ordering & Delivery
- Customization: Available for specific shapes, sizes, and purity levels.
- Minimum Order Quantity (MOQ): Flexible based on customer needs.
- Lead Time: Typically 2-4 weeks, depending on specifications.
- Shipping: Worldwide delivery with secure packaging and handling.
Unlock the potential of Gallium Nitride (GaN) sputtering targets for your thin-film deposition projects. Contact us for premium-quality materials, expert solutions, and custom configurations tailored to your requirements.
