GeSbTe (Germanium Antimony Telluride) Sputtering Targets
- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
Custom products or bulk orders, please contact us for competitive pricing!
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Description
| Material | Germanium Antimony Telluride (GeSbTe) |
| Purity | 99.99% – 99.99999% / 4N 4N5 5N 5N5 6N 6N5 7N |
| Shape | disc, plate, sheet, rod, customized |
| Size | can be customized (contact us) |
| Package | vacuum bag or customer’s request |
| MOQ | 1pcs |
| Supply Ability | 10000pcs per month |
| Lead Time | Qty: 1-100, Time: 3-10 days
Qty: >100, Time: to be negotiated |
Germanium Antimony Telluride (GeSbTe) sputtering targets are materials made from a compound of Germanium (Ge), Antimony (Sb), and Tellurium (Te). These targets are specifically used in thin-film deposition processes, such as sputtering, to produce high-performance phase-change materials. GeSbTe is a well-known compound for its application in phase-change memory devices and optical recording media, such as rewritable CDs, DVDs, and Blu-ray disks.
Key Applications
- Phase-change memory devices: GeSbTe is commonly used in non-volatile memory technologies, including PCM (Phase-Change Memory), which is a promising alternative to flash memory.
- Optical recording media: Used in rewritable optical disks such as CD-RWs, DVD-RWs, and Blu-ray.
- Semiconductor fabrication: GeSbTe is essential for producing thin films in semiconductor applications where rapid and reversible changes in the electrical properties are required.
Features and Benefits
- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
Specifications
- Composition: GeSbTe (Germanium, Antimony, Tellurium)
- Purity: Typically 99.99% or higher, ensuring minimal impurities for enhanced material performance.
- Target Form: Available as circular or rectangular targets, with diameters ranging from 2 inches to 8 inches (or customized sizes).
- Density: Targets are typically high-density for optimal sputtering performance.
- Application Methods: Ideal for DC and RF sputtering.
Customization Options
- Custom compositions: We offer tailored compositions of GeSbTe to meet the needs of specific applications, such as varying amounts of Ge, Sb, and Te for different phase-change properties.
- Target Size: We can provide GeSbTe sputtering targets in various sizes and thicknesses.
- Coatings: Targets can be customized with coatings if required for specific deposition applications.
For more information or to inquire about GeSbTe sputtering targets, please contact us. Our team will assist with selecting the right material for your application, offer pricing details, and provide customized solutions for your sputtering needs.
