GeSe2 (Germanium Selenium) Sputtering Targets
- Infrared Transparency: GeSe₂ offers excellent transmission in the infrared spectrum, making it suitable for IR optics and photonic applications.
- Phase-Change Properties: GeSe₂ is a key material in phase-change memory technology, providing the ability to switch between different states under thermal or electrical stimuli.
- Chemical and Thermal Stability: GeSe₂ thin films exhibit strong chemical resistance and can withstand high temperatures, ensuring longevity and performance in harsh conditions.
- High Refractive Index: GeSe₂ has a high refractive index, making it suitable for optical applications requiring materials with specific light-bending capabilities.
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Description
| Material | Germanium Selenium |
| Purity | 99.9% – 99.9999% / 3N 3N5 4N 4N5 5N 5N5 6N |
| Shape | disc, plate, sheet, rod, customized |
| Size | can be customized (contact us) |
| Package | vacuum bag or customer’s request |
| Place of Origin | China |
| MOQ | 1pcs |
| Supply Ability | 10000pcs per month |
| Lead Time | Qty: 1-100, Time: 3-10 days
Qty: >100, Time: to be negotiated |
Germanium Diselenide (GeSe₂) sputtering targets are used in thin-film deposition processes, particularly in optical and semiconductor applications. GeSe₂ is known for its unique optical and electrical properties, making it a key material in advanced photonic and electronic devices.
Key Applications:
- Optoelectronics: GeSe₂ is used in optoelectronic devices such as photodetectors, solar cells, and infrared sensors due to its favorable electronic and optical properties.
- Chalcogenide Glasses: GeSe₂ is a crucial component in the production of chalcogenide glass thin films, which are used in infrared optics, photonic devices, and memory storage technology (such as phase-change memory).
- Semiconductors: In semiconductor applications, GeSe₂ thin films offer potential for usage in non-volatile memory devices, providing a stable platform for memory retention.
- Infrared Optics: Due to its wide transmission in the infrared region, GeSe₂ is used in the production of IR lenses and windows, especially in environments requiring materials with high chemical resistance and thermal stability.
- Thin Film Transistors (TFTs): GeSe₂ is explored as a potential material for thin-film transistors due to its semiconductor properties and compatibility with flexible electronics.
Features of GeSe₂ Sputtering Targets:
- Infrared Transparency: GeSe₂ offers excellent transmission in the infrared spectrum, making it suitable for IR optics and photonic applications.
- Phase-Change Properties: GeSe₂ is a key material in phase-change memory technology, providing the ability to switch between different states under thermal or electrical stimuli.
- Chemical and Thermal Stability: GeSe₂ thin films exhibit strong chemical resistance and can withstand high temperatures, ensuring longevity and performance in harsh conditions.
- High Refractive Index: GeSe₂ has a high refractive index, making it suitable for optical applications requiring materials with specific light-bending capabilities.
Customization Options:
- Dimensions: GeSe₂ sputtering targets are available in a variety of shapes and sizes (discs, plates, and custom geometries) to meet the needs of different thin-film deposition systems.
- Purity Levels: High-purity GeSe₂ sputtering targets (up to 99.999%) are available for precision optical and electronic applications.
- Composition Control: Customization of Ge and Se ratios can be offered to adjust the material’s properties to match specific application requirements.
GeSe₂ sputtering targets from Tinsan Materials offer excellent infrared transparency, phase-change properties, and chemical stability for optoelectronics, IR optics, and semiconductor applications. Custom sizes and high-purity targets available for advanced thin-film deposition.
If you have specific requirements, such as dimensions, purity, or application details, please contact us to match your needs.
