NiSi2 (Nickel Disilicide) Pellets Granules Evaporation Materials
- Low Resistivity: NiSi₂ has excellent electrical conductivity, making it ideal for forming low-resistance contacts in silicon-based devices.
- Thermal Stability: NiSi₂ films maintain their performance at high temperatures, which is critical for high-temperature semiconductor processing.
- Good Adhesion: Thin films of NiSi₂ adhere well to silicon and other substrates, ensuring durability in semiconductor devices.
- High Purity: The high purity (typically ≥ 99.9%) of the material ensures that the deposited films have superior performance in sensitive electronic applications.
- Excellent Silicon Compatibility: NiSi₂ integrates well with silicon, which is crucial for creating stable, conductive contacts in silicon devices.
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Description
| Material | NiSi2 |
| Purity | 99.9% – 99.999% / 3N 3N5 4N 4N5 5N |
| Shape | Pellets / Granules / Particles / Pieces |
| Size | can be customized (contact us) |
| Package | vacuum bag or customer’s request |
| Place of Origin | China |
| Supply Ability | 1000kg per month |
| Lead Time | Qty: 1-100, Time: 3-10 days
Qty: >100, Time: to be negotiated |
Nickel Disilicide (NiSi₂) pellets are high-purity evaporation materials used in physical vapor deposition (PVD) techniques such as thermal evaporation and electron-beam evaporation. NiSi₂ thin films are vital in the semiconductor industry due to their excellent electrical conductivity and compatibility with silicon substrates, making them essential for advanced microelectronics and integrated circuits.
Key Applications:
- Semiconductor Devices: NiSi₂ is commonly used in the formation of silicide contacts for microelectronics, improving the electrical properties of transistors and integrated circuits.
- Microelectronics: NiSi₂ films are critical in the manufacturing of metal-oxide-semiconductor field-effect transistors (MOSFETs) and other microelectronic components.
- Interconnect Technology: It provides low-resistance electrical interconnections in silicon-based devices.
- Optoelectronics: NiSi₂ thin films are also employed in optoelectronic devices for efficient contact layers.
Features:
- Low Resistivity: NiSi₂ has excellent electrical conductivity, making it ideal for forming low-resistance contacts in silicon-based devices.
- Thermal Stability: NiSi₂ films maintain their performance at high temperatures, which is critical for high-temperature semiconductor processing.
- Good Adhesion: Thin films of NiSi₂ adhere well to silicon and other substrates, ensuring durability in semiconductor devices.
- High Purity: The high purity (typically ≥ 99.9%) of the material ensures that the deposited films have superior performance in sensitive electronic applications.
- Excellent Silicon Compatibility: NiSi₂ integrates well with silicon, which is crucial for creating stable, conductive contacts in silicon devices.
Specifications:
- Material: Nickel Disilicide (NiSi₂)
- Purity: ≥ 99.9%
- Shape: Pellets
- Size: Custom sizes available, typically 1-6 mm in diameter
- Melting Point: ~993°C
- Density: 5.87 g/cm³
- Deposition Methods: Suitable for thermal evaporation, electron-beam evaporation, and other PVD processes
- Applications: Semiconductor devices, microelectronics, interconnect technology, optoelectronics
Tinsan Materials offers high-purity NiSi₂ (Nickel Disilicide) Pellets for thin-film deposition via thermal and electron-beam evaporation. Ideal for semiconductor devices, microelectronics, and optoelectronics. Available in various sizes for PVD processes.
If you have specific requirements, such as dimensions, purity, or application details, please contact us to match your needs.
