SnS2 (Tin Disulfide) Sputtering Target

  • Semiconductor Properties: SnS₂ has a direct bandgap, making it suitable for absorbing light and generating charge carriers, ideal for photovoltaic and optoelectronic applications.
  • High Absorption Coefficient: SnS₂ thin films exhibit high optical absorption, making them effective in solar energy harvesting applications.
  • Environmentally Friendly: Tin and sulfur are abundant and non-toxic elements, making SnS₂ a more environmentally benign material compared to some other semiconductor compounds.
  • Layered Structure: The layered crystal structure of SnS₂ allows for good ion intercalation in energy storage devices and provides opportunities for 2D material applications.

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Description

Material SnS2
Purity 99.9% – 99.9999% / 3N 3N5 4N 4N5 5N 5N5 6N
Shape disc, plate, sheet, rod, customized
Size can be customized (contact us)
Package vacuum bag or customer’s request
Place of Origin China
MOQ 1pcs
Supply Ability 10000pcs per month
Lead Time Qty: 1-100, Time: 3-10 days

Qty: >100, Time: to be negotiated

 

Tin Disulfide (SnS₂) sputtering targets are used in the deposition of thin films, particularly for applications in photovoltaics, optoelectronics, and energy storage devices. SnS₂ is a semiconductor material with a layered structure and excellent optical and electrical properties, making it suitable for use in next-generation solar cells, thin-film transistors (TFTs), and sensors.

Key Applications:

  • Photovoltaics: SnS₂ is used in the fabrication of solar cells due to its favorable bandgap and high absorption coefficient. It is a promising material for thin-film solar cells that aim to be cost-effective and environmentally friendly.
  • Optoelectronics: SnS₂ thin films are applied in optoelectronic devices such as photodetectors and light-emitting diodes (LEDs), thanks to their good photoresponsivity and electrical characteristics.
  • Energy Storage: SnS₂ is explored as an anode material in lithium-ion batteries due to its high theoretical capacity and layered structure, which allows for good ion intercalation and storage.
  • Thin-Film Transistors (TFTs): In electronics, SnS₂ films are utilized in thin-film transistors due to their good semiconducting properties, making them suitable for displays and flexible electronics.

Features of SnS₂ Sputtering Targets:

  • Semiconductor Properties: SnS₂ has a direct bandgap, making it suitable for absorbing light and generating charge carriers, ideal for photovoltaic and optoelectronic applications.
  • High Absorption Coefficient: SnS₂ thin films exhibit high optical absorption, making them effective in solar energy harvesting applications.
  • Environmentally Friendly: Tin and sulfur are abundant and non-toxic elements, making SnS₂ a more environmentally benign material compared to some other semiconductor compounds.
  • Layered Structure: The layered crystal structure of SnS₂ allows for good ion intercalation in energy storage devices and provides opportunities for 2D material applications.

Customization Options:

  • Target Sizes: SnS₂ sputtering targets can be produced in various sizes and geometries, including circular, rectangular, or custom shapes, to accommodate different sputtering systems.
  • Purity Levels: High-purity SnS₂ targets can be manufactured for applications that require precise material quality, such as in the semiconductor industry.
  • Bonding Services: For improved thermal management during the sputtering process, SnS₂ targets can be bonded to backing plates to enhance performance and longevity.

SnS₂ (Tin Disulfide) sputtering targets from Tinsan Materials are ideal for thin-film applications in photovoltaics, optoelectronics, and energy storage devices. Offering customizable sizes and high-purity options, SnS₂ targets provide excellent semiconductor properties, high absorption, and environmentally friendly performance.

If you have specific requirements, such as dimensions, purity, or application details, please contact us to match your needs.