Showing 193–204 of 525 results
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- Wide Bandgap (4.8 eV): Ga₂O₃ is a wide-bandgap semiconductor, offering superior electrical performance in power electronics and UV detection.
- High Optical Transparency: Ga₂O₃ is transparent in the UV-visible range, making it an ideal material for optical applications.
- High Thermal and Chemical Stability: The material exhibits stability under extreme thermal conditions, enhancing its performance in harsh environments.
- Excellent Thin Film Quality: Ga₂O₃ forms smooth, uniform thin films, ensuring high precision in electronic and optical devices.
- Low Cost and Availability: Compared to other wide-bandgap semiconductors like SiC or GaN, Ga₂O₃ offers a cost-effective alternative for high-performance electronics.
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- Wide Bandgap: GaS possesses a wide bandgap of about 2.5 eV, making it suitable for UV and visible light applications.
- High Purity: GaS targets are available in high-purity forms to ensure the quality and performance of the deposited films.
- Layered Structure: The layered nature of GaS allows for easy mechanical exfoliation, enabling the production of high-quality monolayers and thin films.
- Thermal Stability: GaS exhibits good thermal stability, maintaining its properties during high-temperature processing.
- Good Electrical Conductivity: GaS is a good electrical conductor, making it valuable in electronic applications.
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- Strong Magnetic Properties: Gadolinium exhibits significant paramagnetic behavior, especially near room temperature, making it useful in advanced magnetic applications.
- Optical and Thermal Stability: Gadolinium’s stability at high temperatures allows it to be deposited as a durable thin film in various optical and thermal applications.
- High Purity: The high purity of Gadolinium ensures optimal performance in precision deposition processes like thermal evaporation and e-beam evaporation.
- Rare-Earth Luminescence: Gadolinium can be used in luminescent materials, enhancing performance in lighting and display technologies.
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- Magnetocaloric Properties: Gadolinium exhibits a large magnetocaloric effect, making it highly valuable in solid-state refrigeration systems.
- Neutron Absorption: Gadolinium is one of the best materials for absorbing neutrons, making it indispensable for nuclear reactors and radiation shielding.
- Magnetic Properties: Gadolinium is strongly magnetic at low temperatures (below 20°C), with a Curie temperature of around 293 K (20°C), where it loses its ferromagnetic properties.
- Thermal Stability: Gadolinium powder has excellent thermal stability and can withstand high temperatures, making it suitable for use in nuclear and high-temperature applications.
- Chemical Reactivity: Gadolinium is relatively stable in dry air but reacts with moisture, forming gadolinium oxide (Gd2O3) on the surface.
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- Purity: Typically available at 99.9% or higher purity to ensure optimal film quality and performance.
- Customizable Size and Shape: Gadolinium sputtering targets are available in various forms, such as discs, plates, or cylinders, tailored to specific deposition systems.
- Magnetic Properties: Gadolinium’s strong magnetic characteristics are highly desirable in magnetic thin films.
- Oxidation Resistance: Gadolinium can be coated or alloyed to prevent oxidation during sputtering.
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- Magnetic Properties: Exhibits strong paramagnetism, making it useful in magneto-optical and spintronic devices.
- High Dielectric Constant: Gd₂O₃ has a high dielectric constant, making it an excellent material for electronics and capacitors.
- Thermal Stability: Gd₂O₃ can withstand high temperatures, making it suitable for high-performance applications.
- Optical Transparency: It has excellent transparency in both visible and infrared wavelengths, ideal for optical coatings.
- Chemical Inertness: Highly resistant to corrosion and oxidation, ensuring long-term stability of thin films.
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- High Purity: Available in high-purity levels to ensure the quality of thin films for sensitive electronic and optical applications.
- Magnetic Properties: Gd₂O₃ exhibits strong magnetic behavior, making it suitable for applications in magnetic storage and spintronic devices.
- High-k Dielectric: Its high dielectric constant makes Gd₂O₃ ideal for use in semiconductor devices as a gate dielectric material.
- Thermal Stability: Gd₂O₃ is thermally stable, maintaining its structural integrity and properties during high-temperature processes.
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- High Refractive Index: Germanium has a high refractive index (around 4.0 at 10 µm), making it ideal for IR optics and imaging systems.
- Broad Infrared Transparency: Germanium is transparent in the infrared spectrum, making it suitable for IR optical coatings, lenses, and filters.
- Excellent Electron Mobility: Germanium’s electron mobility is higher than silicon, enhancing its application in semiconductor devices.
- High Purity: Germanium used in evaporation is highly purified (typically ≥ 99.99%), ensuring uniform and high-quality thin films.
- Low Melting Point: Germanium has a relatively low melting point (937°C), making it easy to evaporate in standard PVD systems.
- Compatible with Silicon: Germanium is often used in conjunction with silicon in semiconductor and optoelectronic applications.
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- High Refractive Index: Germanium’s high refractive index (around 4.0) makes it ideal for use in infrared optics.
- Infrared Transparency: Germanium is transparent to infrared light in wavelengths ranging from 2 µm to 14 µm, making it ideal for thermal imaging and IR optics.
- Semiconductor Properties: Germanium has a narrow band gap (0.67 eV) and high electron mobility, making it suitable for high-speed electronic devices and optical communication.
- Corrosion Resistance: Germanium is resistant to oxidation and corrosion, which makes it durable in harsh environments.
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- Semiconducting properties: GeS is a semiconductor with excellent electrical conductivity, ideal for use in electronic and optoelectronic applications.
- Optical performance: The material exhibits specific optical properties that make it suitable for optoelectronic and sensor devices.
- High purity: GeS sputtering targets are available in high purity for optimal thin film quality.
- Customizable: Can be tailored for various applications, with flexibility in composition, size, and target specifications.
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- Phase-change properties: GeSbTe materials can change from an amorphous to a crystalline state, making them suitable for high-speed data storage.
- High thermal stability: Provides reliable performance under a wide range of temperatures.
- Good electrical and optical properties: Offers optimal conductivity and transparency needed for memory and optical devices.
- Customization: Available in various compositions and dimensions, meeting specific application requirements.
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- Excellent IR Transparency: GeSe₂ has good transmission in the infrared spectrum, making it ideal for optical coatings and IR components.
- Semiconducting Properties: It exhibits semiconductor behavior, making it useful for electronics, photonics, and photovoltaic applications.
- Phase Change Behavior: GeSe₂ can undergo reversible phase changes, a property that is useful in memory storage devices.
- Good Film Uniformity: When evaporated, GeSe₂ forms uniform, high-quality thin films, suitable for precise optical coatings and electronic applications.
